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zmm 1...zmm200 silicon planar zener diodes in minimelf case especially for automatic insertion. the zener voltages are graded according to the international e 24 standard. smaller voltage tolerances and higher zener voltages are upon request. these diodes are also available in do-35 case with the type designation bzx55c... absolute maximum ratings (t a = 25 o c) symbol value unit power dissipation p tot 500 1) mw junction temperature t j 175 o c storage temperature range t s -55 to +175 o c 1) valid provided that electrodes ar e kept at ambient temperature characteristics at t amb = 25 o c symbol min. typ. max. unit thermal resistance junction to ambient air r tha - - 0.3 1) k/mw forward voltage at i f = 100ma v f - - 1 v 1) valid provided that electrodes ar e kept at ambient temperature ll-34 1 date:2011/05 www.htsemi.com semiconductor jinyu
zener voltage range 1) dynamic resistance reverse leakage current temp coefficient of zener voltage l zt for v zt 2) r zjt r zjk at i zk t a =25 o ct a = 125 o c type vznom v ma v ? ? ma a a i r at v r v tkvz %/k zmm 1 3) 0.75 5 0.7...0.8 <8 <50 1 -- -- -- -0.26...-0.23 zmm 2v0 2.0 5 1.80...2.15 <85 <600 1 <100 <200 1 -0.09...-0.06 zmm 2v2 2.2 5 2.08...2.33 <85 <600 1 <75 <160 1 -0.09...-0.06 zmm 2v4 2.4 5 2.28...2.56 <85 <600 1 <50 <100 1 -0.09...-0.06 zmm 2v7 2.7 5 2.5...2.9 <85 <600 1 <10 <50 1 -0.09...-0.06 zmm 3v0 3.0 5 2.8...3.2 <85 <600 1 <4 <40 1 -0.08...-0.05 zmm 3v3 3.3 5 3.1...3.5 <85 <600 1 <2 <40 1 -0.08...-0.05 zmm 3v6 3.6 5 3.4...3.8 <85 <600 1 <2 <40 1 -0.08...-0.05 zmm 3v9 3.9 5 3.7...4.1 <85 <600 1 <2 <40 1 -0.08...-0.05 zmm 4v3 4.3 5 4.0...4.6 <75 <600 1 <1 <20 1 -0.06...-0.03 zmm 4v7 4.7 5 4.4...5.0 <60 <600 1 <0.5 <10 1 -0.05...+0.02 zmm 5v1 5.1 5 4.8...5.4 <35 <550 1 <0.1 <2 1 -0.02...+0.02 zmm 5v6 5.6 5 5.2...6.0 <25 <450 1 <0.1 <2 1 -0.05...+0.05 zmm 6v2 6.2 5 5.8...6.6 <10 <200 1 <0.1 <2 2 0.03...0.06 zmm 6v8 6.8 5 6.4...7.2 <8 <150 1 <0.1 <2 3 0.03...0.07 zmm 7v5 7.5 5 7.0...7.9 <7 <50 1 <0.1 <2 5 0.03...0.07 zmm 8v2 8.2 5 7.7...8.7 <7 <50 1 <0.1 <2 6.2 0.03...0.08 zmm 9v1 9.1 5 8.5...9.6 <10 <50 1 <0.1 <2 6.8 0.03...0.09 zmm 10 10 5 9.4...10.6 <15 <70 1 <0.1 <2 7.5 0.03...0.1 zmm 11 11 5 10.4...11.6 <20 <70 1 <0.1 <2 8.2 0.03...0.11 zmm 12 12 5 11.4...12.7 <20 <90 1 <0.1 <2 9.1 0.03...0.11 zmm 13 13 5 12.4...14.1 <26 <110 1 <0.1 <2 10 0.03...0.11 zmm 15 15 5 13.8...15.6 <30 <110 1 <0.1 <2 11 0.03...0.11 zmm 16 16 5 15.3...17.1 <40 <170 1 <0.1 <2 12 0.03...0.11 zmm 18 18 5 16.8...19.1 <50 <170 1 <0.1 <2 13 0.03...0.11 zmm 20 20 5 18.8...21.2 <55 <220 1 <0.1 <2 15 0.03...0.11 zmm 22 22 5 20.8...23.3 <55 <220 1 <0.1 <2 16 0.04...0.12 zmm 24 24 5 22.8...25.6 <80 <220 1 <0.1 <2 18 0.04...0.12 zmm 27 27 5 25.1...28.9 <80 <220 1 <0.1 <2 20 0.04...0.12 zmm 30 30 5 28...32 <80 <220 1 <0.1 <2 22 0.04...0.12 zmm 33 33 5 31...35 <80 <220 1 <0.1 <2 24 0.04...0.12 zmm 36 36 5 34...38 <80 <220 1 <0.1 <2 27 0.04...0.12 zmm 39 39 2.5 37...41 <90 <500 0.5 <0.1 <5 30 0.04...0.12 zmm 43 43 2.5 40...46 <90 <500 0.5 <0.1 <5 33 0.04...0.12 zmm 47 47 2.5 44...50 <110 <600 0.5 <0.1 <5 36 0.04...0.12 zmm 51 51 2.5 48...54 <125 <700 0.5 <0.1 <10 39 0.04...0.12 zmm 56 56 2.5 52...60 <135 <700 0.5 <0.1 <10 43 0.04...0.12 zmm 62 62 2.5 58...66 <150 <1000 0.5 <0.1 <10 47 0.04...0.12 zmm 68 68 2.5 64...72 <200 <1000 0.5 <0.1 <10 51 0.04...0.12 zmm 75 75 2.5 70...79 <250 <1000 0.5 <0.1 <10 56 0.04...0.12 zmm 82 82 2.5 77...87 <300 <1500 0.25 <0.1 <10 62 0.05...0.12 zmm 91 91 1 85...96 <450 <2000 0.1 <0.1 <10 68 0.05...0.12 zmm 100 100 1 94...106 <450 <5000 0.1 <0.1 <10 75 0.05...0.12 zmm 110 110 1 104...116 <600 <5000 0.1 <0.1 <10 82 0.05...0.12 zmm 120 120 1 114...127 <800 <5500 0.1 <0.1 <10 91 0.05...0.12 zmm 130 130 1 124...141 <950 <6000 0.1 <0.1 <10 100 0.05...0.12 zmm 150 150 1 138...156 <1250 <6500 0.1 <0.1 <10 110 0.05...0.12 zmm 160 160 1 153...171 <1400 <7000 0.1 <0.1 <10 120 0.05...0.12 zmm 180 180 1 168...191 <1700 <8500 0.1 <0.1 <10 130 0.05...0.12 zmm 200 200 1 188...212 <2000 <10000 0.1 <0.1 <10 150 0.05...0.12 1) tested with pulses t p = 20 ms. 2) valid provided that electrodes are kept at ambient temperature 3) the zmm1 is a silicon diode with operation in forward direct ion. hence, the index of all parameters should be ?f? instead of ?z?. connect the cathode electrode to the negative pole. 2 date:2011/05 www.htsemi.com semiconductor jinyu zmm 1...zmm200
0 0 10 20 vz 40 30 zmm 36 zmm 15 test current iz 5ma 10 20 iz zmm 12 breakdown characteristics t j = constant (pulsed) ma 30 0 01 zmm 10 24 3 zmm 27 zmm 18 zmm 22 zmm 33 57 6 vz tj=25 c zmm... o 810 9 zmm 3.3 zmm 3.9 test current iz 5ma 20 10 30 breakdown characteristics t j = constant (pulsed) iz 40 50 ma zmm 1 o tj=25 c zmm 2.7 zmm 8.2 zmm 5.6 zmm 4.7 zmm... v v zmm 6.8 3 date:2011/05 www.htsemi.com semiconductor jinyu zmm 1...zmm200
forward characteristics ma i f v f 10 10 10 1 10 10 10 10 10 0 0.2 0.4 0.6 0.8 1 v 3 2 -1 -2 -3 -4 -5 tj=100 c o tj=25 c o admissible power dissipation versus ambient temperature valid provided that electrodes are kept at ambient temperature. zmm... zmm... 500 400 300 200 100 0 0 100 200 c t amb p tot mw o zmm 51 test current iz 5ma 0 10 0 2 6 4 8 iz 20 30 40 50 60 vz 80 70 90 100 v zmm 43 breakdown characteristics t j = constant (pulsed) ma 10 tj=25 c o zmm 39 zmm 47 zmm... 4 date:2011/05 www.htsemi.com semiconductor jinyu zmm 1...zmm200
1 t 1 zmm5.6 10 s 100v v r =2v 1 10 234 5 3 2 4 5 10 2 vz at iz=5 ma 5 4 3 v r =1v c tot zmm... pf 3 100 7 2 v r =2v 5 4 1000 7 v r =1v t j =25 c o capacitance versus zener voltage -5 10 10 -4 10 -3 10 -2 -1 t p 10 1 5 0.1 1 2 5 1 2 3 4 zmm6.2 6.8/8.2 10 iz 2 5 2 5 10 12 100ma dynamic resistance versus zener current r zj 10 2 4 3 5 100 0.1 2 5 1 o t j =25 c 18 15 27 22 33 zmm... 10 2 5 iz 2 5 100ma pulse thermal resistance versus pulse duration valid provided that the electrodes are kept at ambient temperature. k/w zmm... 4 0.1 7 3 2 4 5 0.05 0.01 0.02 10 3 2 v=0 t p t v= t p p i 0.5 0.2 10 7 5 2 2 5 4 3 10 7 3 zmm... 2 5 4 3 10 2 3 r zj 100 4 5 2 5 3 4 1000 5.1 4.7 3.6 2.7 zmm1 t j =25 c o dynamic resistance versus zener current r tha 5 date:2011/05 www.htsemi.com semiconductor jinyu zmm 1...zmm200
10 o 10 t j =25 c vz at iz=5 ma iz=5 ma 1 1 2 10 4 3 5 234 5 100v 1 -5 23 vz at iz=5 ma 5 4 10 3 24 5 100v zmm... 5 zmm36 t j =25 c 3 2 5 4 10 7 2 dynamic resistance versus zener voltage 100 r zj 5 4 3 7 10 0.1 3 2 5 4 2 3 5 4 1 iz 24 3 2 10 7 2 5 7 3 4 r zj temperature dependence of zener voltage versus zener voltage o 0 5 10 15 25 20 vz tj mv/k 20ma iz=1ma 5ma zmm... vz tj 43 10ma 39 1 1 24 3 5 negative 5 3 2 4 10 47+51 2 4 3 2 r zth 10 5 r zth =r tha .vz. 3 2 4 5 100v vz at iz=5 ma 10 24 3 5 positive zmm... dynamic resistance versus zener current 3 thermal differential resistance versus zener voltage valid provided that electrodes are kept at ambient temperature 3 zmm... 6 date:2011/05 www.htsemi.com semiconductor jinyu zmm 1...zmm200
5.1 0 60 at iz=5 ma -0.2 0 -0.1 20 40 x) c o t j 100 3.6 1 80 120 140 4.7 change of zener voltage versus junction temperature vz 0.3 0.1 0.2 0.4 0.6 0.5 0.8 0.7 v x) vz=35 v 5.6 6.2 5.9 8 7 25 15 10 zmm... 0 10 -0.4 1 2 -0.2 34 5 vz at iz=5 ma 23 5 4 100v 0.6 0.2 0.4 0.8 1.2 1 change of zener voltge from turn-on up to the point of thermal equilibrium versus zener voltage vz=r zth .iz iz=5 ma 1.6 1.4 v zmm... zmm... 40 40 0 0 20 20 vz tj 60 80 100 100v 60 vz at iz=5 ma 80 iz=5 ma vz temperature dependence of zener voltage versus zener voltage mv/k zmm... 3 0 -1 20 40 60 1 0 2 iz=5 ma 120 t j 100 80 140 o c 6 4 5 7 8 9 36v 43v vz bei iz=5ma 51v change of zener voltage versus junction temperature v vz 7 date:2011/05 www.htsemi.com semiconductor jinyu zmm 1...zmm200
4 40 0 020 vz 1 2 3 100v 60 vz at iz=5 ma 80 iz=5 ma change of zener voltge from turn-on up to the point of thermal equilibrium versus zener voltage vz=r zth .iz v 5 zmm... iz=2 ma 8 date:2011/05 www.htsemi.com semiconductor jinyu zmm 1...zmm200

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